The electrical properties and device applications of homoepitaxial and polycrystalline diamond films

Abstract

Electronic applications of semiconductor diamonds are addressed. Doping and electrical properties of these films, formation of low-resistive 'ohmic' contacts, surface modification methods, and experimental device applications are discussed. Of particular interest are high-temperature (300 degrees C) MOSFETs and metal contacts to CVD (chemical vapor deposition) diamond films which were used to fabricate high-temperature (580 degrees C) Schottky diodes, rudimentary MESFETs, and blue light-emitting diodes (LEDs). The status of the emerging technology is reviewed with an emphasis on the areas of current research activity.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>