IEEE Electron Device Letters · 1990 · 197 citations · 8 references
EngineeringMaterials EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsSurface ScienceChemical Vapor DepositionDopingMetal-semiconductor ContactsPlasma Surface TreatmentSemiconductor PhysicsSemiconductor SurfacesChemical Cleaning AgentsChemical Cleaning ProtocolsDiamond Semiconductor DevicesDiamond SemiconductorsElectrical PropertiesPlasma-enhanced Chemical Vapor DepositionSchottky BarriersSemiconductor Surface Preparation
Both doped and undoped homoepitaxial diamond films were fabricated using microwave plasma-enhanced chemical vapor deposition (CVD). The conductivity of the diamond film is strongly affected by the surface treatment. In particular, exposure of film surface to a hydrogen plasma results in the formation of a conductive layer which can be used to obtain linear (ohmic) I-V characteristics of the Au/diamond contacts, regardless of the doping level. It is shown how the proper chemical cleaning of the boron-doped homoepitaxial diamond surface allows the fabrication of Au-gate Schottky diodes with excellent rectifying characteristics at temperatures of at least 400 degrees C.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Resistivity of chemical vapor deposited diamond films
M. I. Landstrass, K. V. Ravi · Applied Physics Letters · 1989 · 499 citations