Hexagonal Boron Nitride

Hexagonal Boron Nitride is a two-dimensional van der Waals material composed of boron and nitrogen atoms arranged in a hexagonal lattice structure, distinguished by its wide bandgap, exceptional thermal stability, and electrical insulation properties, making it a key dielectric substrate and encapsulation layer in two-dimensional semiconductor devices.

5.5K

Publications

382.6K

Citations

19.5K

Authors

2.9K

Institutions

Publications per year

2017–2026

3.2K

Authors

19.5K

  1. KW
    Kenji Watanabe

    National Institute for Materials Science, Japan

    391 publications · 47.4K citations

    97

    h-index

  2. TT
    Takashi Taniguchi

    National Institute for Materials Science, Japan

    399 publications · 43.7K citations

    94

    h-index

  3. IA
    Igor Aharonovich

    University of Technology Sydney, Australia

    77 publications · 6.2K citations

    46

    h-index

  4. JH
    James H. Edgar

    Kansas State University, United States

    58 publications · 3.3K citations

    34

    h-index

  5. PM
    Pulickel M. Ajayan

    Rice University, United States

    41 publications · 10.6K citations

    33

    h-index

1–5 of 19.5K

Venues

  1. Nano Letters

    262 publications · 37.2K citations

    98

    h-index

  2. Nature Communications

    120 publications · 19.9K citations

    75

    h-index

  3. ACS Nano

    164 publications · 17.5K citations

    72

    h-index

  4. Physical Review B

    PRB · 116 publications · 14.1K citations

    63

    h-index

  5. Applied Physics Letters

    229 publications · 16.2K citations

    60

    h-index

1–5