Concepedia

Channel Potential Control

Channel Potential Control is a semiconductor device engineering methodology that governs the electrostatic potential distribution within the conducting channel of a transistor to mitigate short-channel effects by enhancing gate electrode influence over channel charge carriers.

34

Publications

1.1K

Citations

153

Authors

63

Institutions

Publications per year

2017–2026

6

Parents

Publications

34

Atomic Layer Deposition of Dielectrics on Graphene Using Reversibly Physisorbed Ozone

Srikar Jandhyala, Greg Mordi, Bongki Lee et al. · ACS Nano · 2012 · 130 citations

, , +17

An Analytical Surface Potential Model Accounting for the Dual-Modulation Effects in Tunnel FETs

Chunlei Wu, Ru Huang, Qianqian Huang et al. · IEEE Transactions on Electron Devices · 2014 · 102 citations

, , +16

A Novel Barrier Controlled Tunnel FET

Hao Wang, Sheng Chang, Yue Hu et al. · IEEE Electron Device Letters · 2014 · 75 citations

, , +17

Modeling of potentials and threshold voltage for symmetric doped double-gate MOSFETs

A. Cerdeira, Oana Moldovan, M. Estrada · Solid-State Electronics · 2007 · 66 citations

, , +14

Low voltage electrolyte-gated organic transistors making use of high surface area activated carbon gate electrodes

Jonathan Sayago, Francesca Soavi, Yuvaraj Sivalingam et al. · Journal of Materials Chemistry C · 2014 · 62 citations

, , +16

1–5 of 34

Authors

153

  1. GL
    Guang-Li Luo

    National Institutes of Applied Research, Taiwan

    2 publications · 33 citations

    2

    h-index

  2. CC
    Chao-Hsin Chien

    National Yang Ming Chiao Tung University, Taiwan

    2 publications · 33 citations

    2

    h-index

  3. CC
    Che-Wei Chen

    National Yang Ming Chiao Tung University, Taiwan

    2 publications · 33 citations

    2

    h-index

  4. CC
    Cheng-Ting Chung

    National Yang Ming Chiao Tung University, Taiwan

    2 publications · 33 citations

    2

    h-index

  5. YT
    Yuan Taur

    University of California San Diego, United States

    1 publications · 17 citations

    1

    h-index

1–5 of 153

Institutions

63

  1. Peking University

    Beijing, China

    3 h-index

    11 publications

    875 citations

  2. Institute of Microelectronics

    Beijing, China

    3 h-index

    12 publications

    778 citations

  3. National Institutes of Applied Research

    Taipei, Taiwan

    2 h-index

    4 publications

    66 citations

  4. Pusan National University

    Busan, South Korea

    2 h-index

    3 publications

    89 citations

  5. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    2 h-index

    8 publications

    135 citations

  6. Hewlett-Packard (United States)

    Palo Alto, United States

    1 h-index

    1 publications

    12 citations

  7. Indian Institute of Technology Delhi

    New Delhi, India

    1 h-index

    2 publications

    46 citations

  8. Hangzhou Dianzi University

    Hangzhou, China

    1 h-index

    2 publications

    150 citations

1–8 of 63

Venues

  1. IEEE Electron Device Letters

    8 publications · 252 citations

    8

    h-index

  2. IEEE Transactions on Electron Devices

    7 publications · 189 citations

    7

    h-index

  3. Applied Physics Letters

    3 publications · 62 citations

    3

    h-index

  4. Journal of Materials Chemistry C

    2 publications · 91 citations

    2

    h-index

  5. Solid-State Electronics

    2 publications · 104 citations

    2

    h-index

1–5