MoS2 functionalization for ultra-thin atomic layer deposited dielectrics

Angelica Azcatl, Stephen McDonnell, K. C. Santosh, +10

Applied Physics Letters

EngineeringOxidation ResistanceChemistryChemical EngineeringNucleation Sites +15

Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices

B. Lee, Greg Mordi, M. J. Kim, +6

Applied Physics Letters

Materials ScienceGraphene NanomeshesElectrical EngineeringGraphene-based Nano-antennasEngineering +11

Atomic Layer Deposition of Dielectrics on Graphene Using Reversibly Physisorbed Ozone

Srikar Jandhyala, Greg Mordi, Bongki Lee, +10

ACS Nano

EngineeringChemistryGraphene NanomeshesGraphene-based Nano-antennasResidual Nucleation Layer +14

Partially Fluorinated Graphene: Structural and Electrical Characterization

Lanxia Cheng, Srikar Jandhyala, Greg Mordi, +7

ACS Applied Materials & Interfaces

Rapid Selective Etching of PMMA Residues from Transferred Graphene by Carbon Dioxide

Cheng Gong, Herman Carlo Floresca, David Hinojos, +12

The Journal of Physical Chemistry C

EngineeringChemistryPolymersGraphene NanomeshesChemical Engineering +16

Controlling the Atomic Layer Deposition of Titanium Dioxide on Silicon: Dependence on Surface Termination

Stephen McDonnell, Roberto C. Longo, Oliver Seitz, +9

The Journal of Physical Chemistry C

EngineeringSurface TerminationPrecursor NucleationChemical DepositionSilicon On Insulator +17

Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate

Sang‐Chul Lee, O. D. Iyore, Saungeun Park, +10

Carbon

Materials ScienceGraphene NanomeshesElectrical EngineeringEngineeringFlexible Electronics +8

Scaling of HfO2 dielectric on CVD graphene

Stephen McDonnell, Angelica Azcatl, Greg Mordi, +6

Applied Surface Science

EngineeringHfo2 DielectricGraphene FiberApplied PhysicsGraphene +1

Graphene-ferroelectric hybrid devices for multi-valued memory system

Srikar Jandhyala, Greg Mordi, Dacheng Mao, +4

Applied Physics Letters

Graphene Channel ResistanceNon-volatile MemoryEngineeringEmerging Memory TechnologyFerroelectric Random-access Memory +19

Atomic-Layer-Deposited Al2O3 as Gate Dielectrics for Graphene-Based Devices

Bongki Lee, Greg Mordi, Taejoo Park, +8

ECS Transactions

Materials EngineeringMaterials ScienceElectrical EngineeringChemical EngineeringGate Dielectrics +12