J.W. Sleight

Stable SRAM cell design for the 32 nm node and beyond

L. Chang, David Fried, J. M. Hergenrother et al. · 2005 · 564 citations

Low-power Electronics, Non-volatile Memory, Electrical Engineering +12

High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

Sarunya Bangsaruntip, G. M. Cohen, A. Majumdar et al. · 2009 · 289 citations

Engineering, Excellent Electrostatic Scaling, High Performance +16

Study of hypernuclei by associated production

P.H. Pile, S. Bart, R. E. Chrien et al. · Physical Review Letters · 1991 · 202 citations

Nuclear Beam Physics, Nuclear Physics, Engineering +24

Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs

Sarunya Bangsaruntip, G. M. Cohen, Amlan Majumdar et al. · IEEE Electron Device Letters · 2010 · 193 citations

Device Modeling, Semiconductors, Electrical Engineering +13

Microfabrication of a mechanically controllable break junction in silicon

Chongwu Zhou, Christine Müller, M. R. Deshpande et al. · Applied Physics Letters · 1995 · 137 citations

Engineering, Mechanical Engineering, Controllable Break Junction +20