J. M. Hergenrother

Stable SRAM cell design for the 32 nm node and beyond

L. Chang, David Fried, J. M. Hergenrother et al. · 2005 · 564 citations

Low-power Electronics, Non-volatile Memory, Electrical Engineering +12

Experimental evidence for parity-based 2<i>e</i>periodicity in a superconducting single-electron tunneling transistor

Mark Tuominen, J. M. Hergenrother, T. S. Tighe et al. · Physical Review Letters · 1992 · 385 citations

Superconducting Material, Charge Excitations, Engineering +17

Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs

Sang‐Hyun Oh, D. Monroe, J. M. Hergenrother · IEEE Electron Device Letters · 2000 · 353 citations

Device Modeling, Surrounding-gate Mosfets, Electrical Engineering +10

The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length

J. M. Hergenrother, D. Monroe, F. Klemens et al. · 2003 · 91 citations

Lithography-independent Gate Length, Advanced Planar Mosfets, Electrical Engineering +15

Charge transport by Andreev reflection through a mesoscopic superconducting island

J. M. Hergenrother, Mark Tuominen, M. Tinkham · Physical Review Letters · 1994 · 78 citations

Superconducting Material, Electrical Engineering, High-tc Superconductivity +11