J. M. Hergenrother

Stable SRAM cell design for the 32 nm node and beyond

L. Chang, David Fried, J. M. Hergenrother et al. · 2005 · 567 citations

Engineering, Computer Engineering, Electrical Engineering +17

Experimental evidence for parity-based 2<i>e</i>periodicity in a superconducting single-electron tunneling transistor

Mark Tuominen, J. M. Hergenrother, T. S. Tighe et al. · Physical Review Letters · 1992 · 393 citations

Natural Sciences, Materials Science, Physics +17

Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs

Sang‐Hyun Oh, D. Monroe, J. M. Hergenrother · IEEE Electron Device Letters · 2000 · 356 citations

Engineering, Electrical Engineering, Electronic Materials +16

The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length

J. M. Hergenrother, D. Monroe, F. Klemens et al. · 2003 · 91 citations

Engineering, Electrical Engineering, Materials Science +17

Charge transport by Andreev reflection through a mesoscopic superconducting island

J. M. Hergenrother, Mark Tuominen, M. Tinkham · Physical Review Letters · 1994 · 78 citations

Natural Sciences, Physics, Condensed Matter Physics +15