Publication | Closed Access
Experimental evidence for parity-based 2<i>e</i>periodicity in a superconducting single-electron tunneling transistor
385
Citations
9
References
1992
Year
Superconducting MaterialCharge ExcitationsEngineeringI-v CurveTunneling MicroscopyNovel SuperconductorsSuperconductivityQuantum MaterialsSuperconducting DevicesElectrical EngineeringHigh-tc SuperconductivityPhysicsIncremental Free EnergyQuantum SuperconductivityParity-based 2Experimental EvidenceCondensed Matter PhysicsApplied PhysicsQuantum DevicesPresent Experimental Current-voltage
We present experimental current-voltage (I-V) measurements on an Al-${\mathrm{Al}}_{2}$${\mathrm{O}}_{3}$-Al single-electron tunneling transistor in the superconducting state. We observe a variety of features which result from Cooper-pair tunneling processes. At low bias voltages and low temperatures we find that the I-V curve is 2e periodic with respect to the gate-induced charge. Remarkably, this periodicity persists up to 300 mK, a behavior which we interpret as strong evidence of an incremental free energy which depends on whether the number of electrons on the superconducting island is even or odd.
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