B. Busch

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Publications

Citations

1.9K

H-Index

Active since

1988

Affiliations

Rutgers, The State University of New Jersey(Current)

ASM International

Technical University of Munich

Micron (United States)

National University of Singapore

B. Busch is an author at Rutgers, The State University of New Jersey specializing in materials science, natural sciences, and semiconductor device materials.

Publications per year

1988–2004

Publications

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

M. L. Green, M.-Y. Ho, B. Busch et al. · Journal of Applied Physics · 2002 · 279 citations

Natural Sciences, Materials Engineering, Materials Science +17

High temperature stability in lanthanum and zirconia-based gate dielectrics

Jon‐Paul Maria, Dwi Wicaksana, Angus I. Kingon et al. · Journal of Applied Physics · 2001 · 190 citations

Natural Sciences, Materials Engineering, Materials Science +17

Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition

M.-Y. Ho, Hao Gong, G. D. Wilk et al. · Journal of Applied Physics · 2003 · 182 citations

Natural Sciences, Materials Engineering, Materials Science +17

Oxygen exchange and transport in thin zirconia films on Si(100)

B. Busch, W.H. Schulte, Eric Garfunkel et al. · Physical review. B, Condensed matter · 2000 · 140 citations

Natural Sciences, Materials Engineering, Materials Science +16

Multi-component high-K gate dielectrics for the silicon industry

L. Manchanda, M.D. Morris, M.L Green et al. · Microelectronic Engineering · 2001 · 124 citations

Engineering, Electrical Engineering, Materials Science +14

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