B. Busch - Concepedia

Author

B. Busch

Rutgers, The State University of New Jersey

Also Known As

B Busch, B. Busch, B. W. Busch, B.W Busch, B.W. Busch, Brett Busch, Brett W. Busch

Publications

Citations

H-Index

Concepts

All Affiliations

Rutgers, The State University of New Jersey ASM International Technical University of Munich Micron (United States)National University of Singapore

About

B. Busch is an author at Rutgers, The State University of New Jersey specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	30	1.9K
2	Applied Physics	20	29	1.8K
3	Natural Sciences	10	10	334
4	Chemistry	6	6	578
5	Chemical Engineering	1	1	110

B. Busch

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers M. L. Green, M.-Y. Ho, B. Busch, Journal of Applied Physics Film NucleationEngineeringChemistrySilicon On InsulatorAtomic Layer	2002	278
High temperature stability in lanthanum and zirconia-based gate dielectrics Jon‐Paul Maria, Dwi Wicaksana, Angus I. Kingon, Journal of Applied Physics Materials ScienceGate DielectricsElectrical EngineeringHigh Temperature StabilityEngineering	2001	190
Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition M.-Y. Ho, Hao Gong, G. D. Wilk, Journal of Applied Physics Hfo2 Thin FilmsEngineeringTransmission Electron MicroscopyCrystal Growth TechnologyThin Film Process Technology	2003	181
Oxygen exchange and transport in thin zirconia films on Si(100) B. Busch, W.H. Schulte, Eric Garfunkel, Physical review. B, Condensed matter Materials ScienceIsotope SensitivityEngineeringSubstantial Isotope ExchangeOxide Electronics	2000	140
Multi-component high-K gate dielectrics for the silicon industry L. Manchanda, M.D. Morris, M.L Green, Microelectronic Engineering Electrical EngineeringEngineeringNanoelectronicsApplied PhysicsTime-dependent Dielectric Breakdown	2001	124
Photoemission study of Zr- and Hf-silicates for use as high-κ oxides: Role of second nearest neighbors and interface charge R. L. Opila, G. D. Wilk, Md. Ashraful Alam, Applied Physics Letters EngineeringSilicate NetworkInorganic PhotochemistryChemistryElectronic Structure	2002	110
Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition M.-Y. Ho, Hao Gong, G. D. Wilk, Applied Physics Letters Aluminium NitrideEngineeringCrystal Growth TechnologyThin Film Process TechnologyNanoelectronics	2002	102
Chemical vapor deposition of HfO2 films on Si(100) Şafak Sayan, Shyam Aravamudhan, B. Busch, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Hfo2 FilmsAtomic Force MicroscopyElectrical EngineeringEngineeringElectronic Materials	2002	95
Materials Characterization of Alternative Gate Dielectrics B. Busch, Olivier Pluchery, Yves J. Chabal, MRS Bulletin Materials EngineeringElectrical EngineeringEngineeringMaterials CharacterizationTime-dependent Dielectric Breakdown	2002	80
Advances in high κ gate dielectrics for Si and III–V semiconductors J. Kwo, M. Hong, B. Busch, Journal of Crystal Growth SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringIii–v Semiconductors	2003	70

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