Eric Garfunkel - Concepedia

Author

Eric Garfunkel

Rutgers, The State University of New Jersey ORCID

Also Known As

E Garfunkel, E. GARFUNKEL, E. Garfunkel, E. L. GARFUNKEL, E. L. Garfunkel, E.L. Garfunkel, ERIC GARFUNKEL, Eric Garfunkel, Eric L. Garfunkel, Eric L. Garfunkel

315

Publications

15.2K

Citations

H-Index

130

Concepts

All Affiliations

Rutgers, The State University of New Jersey Rutgers Sexual and Reproductive Health and Rights

About

Eric Garfunkel is an author at Rutgers, The State University of New Jersey specializing in engineering, materials science, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	56	126	13.2K
2	Applied Physics	46	89	8.7K
3	Natural Sciences	12	13	774
4	Arts	1	1	15
5	Medicine	1	1	209

Eric Garfunkel

141

Publications

14.3K

Citations

H-Index

Page 1

	Year	Citations
Evolution of Electrical, Chemical, and Structural Properties of Transparent and Conducting Chemically Derived Graphene Thin Films Cecilia Mattevi, Goki Eda, Stefano Agnoli, Advanced Functional Materials Materials ScienceGraphene NanomeshesElectrical EngineeringElectronic DevicesStructural Properties	2009	1.7K
Electrolyte design for LiF-rich solid–electrolyte interfaces to enable high-performance microsized alloy anodes for batteries Ji Chen, Xiulin Fan, Qin Li, Nature Energy Materials ScienceChemical EngineeringElectrolyte DesignEngineeringBattery Electrode Materials	2020	1.1K
Ultrathin (&lt;4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits M. L. Green, E. P. Gusev, R. Degraeve, Journal of Applied Physics EngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On InsulatorIntegrated Circuit Devices	2001	767
Photochemical Water Oxidation by Crystalline Polymorphs of Manganese Oxides: Structural Requirements for Catalysis David M. Robinson, Yong Bok Go, Michelle Mui, Journal of the American Chemical Society Materials ScienceInorganic ChemistryChemical EngineeringStandard RutheniumEngineering	2013	633
Effect of nitrogen on band alignment in HfSiON gate dielectrics Şafak Sayan, Nhan V. Nguyen, James R. Ehrstein, Applied Physics Letters Oxide HeterostructuresMaterials ScienceElectrical EngineeringEpitaxial GrowthEngineering	2005	456
P-Doped Porous Carbon as Metal Free Catalysts for Selective Aerobic Oxidation with an Unexpected Mechanism Mehulkumar Patel, Feixiang Luo, M. Reza Khoshi, ACS Nano Metal Free CatalystsEngineeringGreen ChemistryChemistryGraphene Nanomeshes	2016	347
Hf O 2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition Martin M. Frank, G. D. Wilk, D. Starodub, Applied Physics Letters EngineeringThermal TreatmentsSemiconductor DeviceMolecular Beam EpitaxyEpitaxial Growth	2005	312
Titanium and reduced titania overlayers on titanium dioxide(110) Jeffrey Thomas Mayer, Ulrike Diebold, T. E. Madey, Journal of Electron Spectroscopy and Related Phenomena Materials ScienceMaterials EngineeringSurface CharacterizationEngineeringSurface Science	1995	270
Intermixing at the tantalum oxide/silicon interface in gate dielectric structures G. B. Alers, D. J. Werder, Yves J. Chabal, Applied Physics Letters Oxide HeterostructuresMaterials ScienceElectrical EngineeringDielectric ConstantEngineering	1998	264
Band offsets of ultrathin high-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>κ</mml:mi></mml:math>oxide films with Si Eric Bersch, Sylvie Rangan, R. A. Bartynski, Physical Review B Materials ScienceSemiconductorsEngineeringUltraviolet PhotoemissionCrystalline Defects	2008	264

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