L. Manchanda

Study of thermally oxidized yttrium films on silicon

M. Gurvitch, L. Manchanda, J. M. Gibson · Applied Physics Letters · 1987 · 139 citations

Natural Sciences, Materials Engineering, Materials Science +17

Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness

M. L. Green, D. Brasen, K. Evans‐Lutterodt et al. · Applied Physics Letters · 1994 · 135 citations

Engineering, Materials Engineering, Materials Science +17

Multi-component high-K gate dielectrics for the silicon industry

L. Manchanda, M.D. Morris, M.L Green et al. · Microelectronic Engineering · 2001 · 124 citations

Engineering, Electrical Engineering, Materials Science +14

Yttrium oxide/silicon dioxide: a new dielectric structure for VLSI/ULSI circuits

L. Manchanda, M. Gurvitch · IEEE Electron Device Letters · 1988 · 108 citations

Engineering, Electrical Engineering, Materials Science +17

Anomalous C-V characteristics of implanted poly MOS structure in n/sup +//p/sup +/ dual-gate CMOS technology

C.-Y. Lu, J.M. Sung, H.C. Kirsch et al. · IEEE Electron Device Letters · 1989 · 85 citations

Engineering, Electrical Engineering, Materials Science +17