J.M. Sung

Relationship between hole trapping and interface state generation in metal-oxide-silicon structures

S. J. Wang, J.M. Sung, S. A. Lyon · Applied Physics Letters · 1988 · 102 citations

Engineering, Physics, Nanoelectronics +15

Reverse short-channel effects on threshold voltage in submicrometer salicide devices

C.-Y. Lu, J.M. Sung · IEEE Electron Device Letters · 1989 · 96 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +12

Anomalous C-V characteristics of implanted poly MOS structure in n/sup +//p/sup +/ dual-gate CMOS technology

C.-Y. Lu, J.M. Sung, H.C. Kirsch et al. · IEEE Electron Device Letters · 1989 · 85 citations

Materials Engineering, Materials Science, Electrical Engineering +12

Cycling of defects between trapped negative charge and interface states at the Si-SiO2 interface

J.M. Sung, S. A. Lyon · Applied Physics Letters · 1987 · 29 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

Fluorine effect on boron diffusion of p/sup +/ gate devices (MOSFETs)

J.M. Sung, C.-Y. Lu, M.L. Chen et al. · 2003 · 28 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15