J.M. Sung - Concepedia

Author

J.M. Sung

AT&T (United States)

Also Known As

J. M. Sung, J. Sung, J.M. Sung, Janmye Sung

Publications

463

Citations

H-Index

Concepts

All Affiliations

AT&T (United States)Princeton University

About

J.M. Sung is an author at AT&T (United States) specializing in electrical engineering, microelectronics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	11	434
2	Electrical Engineering	10	10	332
3	Applied Physics	8	8	395
4	Computer Engineering	3	3	44
5	Materials Engineering	1	1	85

J.M. Sung

Publications

434

Citations

H-Index

Page 1

	Year	Citations
Relationship between hole trapping and interface state generation in metal-oxide-silicon structures S. J. Wang, J.M. Sung, S. A. Lyon Applied Physics Letters EngineeringPhysicsNanoelectronicsStress-induced Leakage CurrentSurface Science	1988	102
Reverse short-channel effects on threshold voltage in submicrometer salicide devices C.-Y. Lu, J.M. Sung IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringPhysics	1989	96
Anomalous C-V characteristics of implanted poly MOS structure in n/sup +//p/sup +/ dual-gate CMOS technology C.-Y. Lu, J.M. Sung, H.C. Kirsch, IEEE Electron Device Letters Materials EngineeringMaterials ScienceElectrical EngineeringGate-bias DependenceEngineering	1989	85
Cycling of defects between trapped negative charge and interface states at the Si-SiO2 interface J.M. Sung, S. A. Lyon Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	1987	29
Fluorine effect on boron diffusion of p/sup +/ gate devices (MOSFETs) J.M. Sung, C.-Y. Lu, M.L. Chen, SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesBoron Diffusion	2003	28
Reverse L-shape sealed poly-buffer LOCOS technology J.M. Sung, Chun‐An Lu, L.B. Fritzinger, IEEE Electron Device Letters EngineeringIntegrated CircuitsPressure VesselSilicon On InsulatorPad Oxide Film	1990	24
A Half-micron Super Self-aligned BiCMOS Technology for High Speed Applications T. M. Liu, G.M. Chin, Dae‐Young Jeon, Low-power ElectronicsHigh Speed ApplicationsElectrical EngineeringHigh DensityEngineering	1992	21
A 6 GHz 60 mW BiCMOS phase-locked loop with 2 V supply Behzad Razavi, J.M. Sung Electrical EngineeringEngineeringRadio FrequencyHigh-frequency DeviceMicrowave Transmission	2002	16
A high performance super self-aligned 3 V/5 V BiCMOS technology with extremely low parasitics for low-power mixed-signal applications J.M. Sung, T.-Y. Chiu, Kieran Lau, IEEE Transactions on Electron Devices Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignDeveloped Bicmos Process	1995	13
BEST2-a high performance super self-aligned 3 V/5 V BiCMOS technology with extremely low parasitics for low-power mixed-signal applications J.M. Sung, T.Y. Chui, Kieran Lau, Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignRf Semiconductor	2002	10

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