Thermally stable integrated Se-based OTS selectors with >20 MA/cm² current drive, >3.10³ half-bias nonlinearity, tunable threshold voltage and excellent endurance

Abstract

We report on novel integrated Se-based Ovonic Threshold Switching selector devices, with sizes down to 50nm, which can be operated reliably at high drive current densities, exceeding 20MA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , and have high half-bias nonlinearity exceeding well 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> . We show functional devices after a thermal budget of 350°C. Their electrical properties are tunable by careful control of the Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Se <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> films composition, thickness or process condition.