A practical superhydrophilic self cleaning and antireflective surface for outdoor photovoltaic applications

Jaesung Son, Shreya Kundu, Lalit Verma, +4

Solar Energy Materials and Solar Cells

Self-cleaning SurfaceChemical EngineeringEngineeringSolar PowerEnvironmental Engineering +8

Understanding the Role of Nitrogen in Plasma-Assisted Surface Modification of Magnetic Recording Media with and without Ultrathin Carbon Overcoats

Neeraj Dwivedi, Reuben J. Yeo, Nalam Satyanarayana, +3

Scientific Reports

Highly Scaled Ruthenium Interconnects

Shibesh Dutta, Shreya Kundu, Anshul Gupta, +6

IEEE Electron Device Letters

Materials ScienceStaneneElectrical EngineeringMetal-spacer Patterning TechniqueEngineering +8

Sub-100 nm² Cobalt Interconnects

Shibesh Dutta, Sofie Beyne, Anshul Gupta, +9

IEEE Electron Device Letters

Electrical EngineeringHigh-tc SuperconductivityEngineeringSpecific ResistanceElectromigration Technique +12

Ovonic Threshold‐Switching Ge_<i>x</i>Se_<i>y</i> Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles

Sergiu Clima, Daniele Garbin, Karl Opsomer, +13

physica status solidi (RRL) - Rapid Research Letters

EngineeringSolid-state ChemistryElectronic StructureCharge TransportTrap Nature +19

Enablement of STT-MRAM as last level cache for the high performance computing domain at the 5nm node

Sushil Sakhare, Manu Perumkunnil, Trong Huynh-Bao, +14

Last Level CacheNon-volatile MemoryElectrical EngineeringEngineeringVlsi Design +12

Thermally stable integrated Se-based OTS selectors with &gt;20 MA/cm² current drive, &gt;3.10³ half-bias nonlinearity, tunable threshold voltage and excellent endurance

B. Govoreanu, Gabriele Luca Donadio, Karl Opsomer, +13

EngineeringFunctional DevicesIntegrated CircuitsSemiconductor DeviceElectronic Devices +16

High-Aspect-Ratio Ruthenium Lines for Buried Power Rail

Anshul Gupta, Shreya Kundu, Lieve Teugels, +9

Materials ScienceLow-power ElectronicsElectrical EngineeringEngineeringPower Rail +12

Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for V_t &gt; 0 V and I_on &gt; 30 µA/µm

Subhali Subhechha, Nouredine Rassoul, A. Belmonte, +21

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Low-power ElectronicsElectrical EngineeringElectronic DevicesUltra-low Leakage Igzo-tftsEngineering +8

Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch

Taras Ravsher, Daniele Garbin, A. Fantini, +10

IEEE Transactions on Electron Devices

EngineeringEmerging Memory TechnologyComputer ArchitectureSelf-rectifying Memory CellIntegrated Circuits +15