Applied Physics Letters · 2002 · 99 citations · 12 references
Materials EngineeringOxide HeterostructuresMaterials ScienceAnnealing-induced CompactionEngineeringAluminium NitrideCrystalline DefectsAlumina Band GapOxide ElectronicsOxide Conduction BandSurface ScienceApplied PhysicsMaterial AnalysisSemiconductor MaterialAl2o3 FilmThin FilmsLayered MaterialEpitaxial Growth
Atomic-layer-deposited layers of Al2O3 on (100)Si are shown to transform into γ-Al2O3 when treated at temperatures above 800 °C. The compaction process leads to widening of the alumina band gap and causes an ≈0.5 eV upward shift of the oxide conduction band with respect to the Fermi level of Au and Al. In the case of incomplete transformation of the Al2O3 film, large leakage currents across the oxide are observed, which are explained by the formation of conducting grain boundaries similar to those formed on γ-alumina surfaces.
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High-resolution depth profiling in ultrathin Al2O3 films on Si
E. P. Gusev, M. Copel, E. Cartier et al. · Applied Physics Letters · 2000 · 412 citations
Materials Engineering, Materials Science, Ultrathin Al2o3 Films +13
Electronic and crystallographic structure of γ-alumina thin films
B. Ealet, M. H. El-yakhloufi, E. Gillet et al. · Thin Solid Films · 1994 · 235 citations