GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2

Abstract

We report GaN p-n diodes on free-standing GaN substrates: a record high Baliga's figure-of-merit (V<;sub>B<;/sub><;sup>2<;/sup>/ Ron) of 12.8 GW/cm<;sup>2<;/sup> is achieved with a 32 μm drift layer and a diode diameter of 107 μm exhibiting a BV > 3.4 kV and a R<;sub>on<;/sub> <; 1 mΩ-cm<;sup>2<;/sup>. The leakage current density is low: 10<;sup>-3<;/sup> - 10<;sup>-4<;/sup> A/cm<;sup>2<;/sup> at 3 kV. A record low ideality factor of 1.1-1.3 is signature of high GaN quality. These are among the best-reported GaN p-n diodes.