Naoki Kaneda

Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

Hiroshi Ohta, Naoki Kaneda, Fumimasa Horikiri et al. · IEEE Electron Device Letters · 2015 · 217 citations

Engineering, Electrical Engineering, Materials Science +17

1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

Kazuki Nomoto, Bo Song, Zongyang Hu et al. · IEEE Electron Device Letters · 2015 · 193 citations

Engineering, Electrical Engineering, Materials Science +15

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

Yoshitomo Hatakeyama, Kazuki Nomoto, Naoki Kaneda et al. · IEEE Electron Device Letters · 2011 · 125 citations

Engineering, Electrical Engineering, Materials Science +17

High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p–n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

Yoshitomo Hatakeyama, Kazuki Nomoto, Akihisa Terano et al. · Japanese Journal of Applied Physics · 2013 · 116 citations

Engineering, Electrical Engineering, Materials Science +17

Over 1.0 kV GaN <i>p</i>–<i>n</i> junction diodes on free‐standing GaN substrates

Kazuki Nomoto, Yoshitomo Hatakeyama, Hideo Katayose et al. · physica status solidi (a) · 2011 · 90 citations

Engineering, Electrical Engineering, Materials Science +17