Yoshitomo Hatakeyama

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

Yoshitomo Hatakeyama, Kazuki Nomoto, Naoki Kaneda et al. · IEEE Electron Device Letters · 2011 · 125 citations

Engineering, Electrical Engineering, Materials Science +17

High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p–n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

Yoshitomo Hatakeyama, Kazuki Nomoto, Akihisa Terano et al. · Japanese Journal of Applied Physics · 2013 · 116 citations

Engineering, Electrical Engineering, Materials Science +17

Over 1.0 kV GaN <i>p</i>–<i>n</i> junction diodes on free‐standing GaN substrates

Kazuki Nomoto, Yoshitomo Hatakeyama, Hideo Katayose et al. · physica status solidi (a) · 2011 · 90 citations

Engineering, Electrical Engineering, Materials Science +17

Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p–n Junction Epitaxial Layers

Kazuhiro Mochizuki, Tomoyoshi Mishima, Yuya Ishida et al. · Japanese Journal of Applied Physics · 2013 · 17 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of Surface Recombination on Forward Current–Voltage Characteristics of Mesa GaN $\hbox{p}^{+}\hbox{n}$ Diodes Formed on GaN Free-Standing Substrates

Kazuhiro Mochizuki, Kazuki Nomoto, Yoshitomo Hatakeyama et al. · IEEE Transactions on Electron Devices · 2012 · 15 citations

Engineering, Electrical Engineering, Materials Science +17