Tomoyoshi Mishima

Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

Hiroshi Ohta, Naoki Kaneda, Fumimasa Horikiri et al. · IEEE Electron Device Letters · 2015 · 217 citations

Engineering, Electrical Engineering, Materials Science +17

1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

Kazuki Nomoto, Bo Song, Zongyang Hu et al. · IEEE Electron Device Letters · 2015 · 193 citations

Engineering, Electrical Engineering, Materials Science +15

Power-generation performance of lead-free (K,Na)NbO3 piezoelectric thin-film energy harvesters

Isaku Kanno, Tomoharu Ichida, Kazuhiko Adachi et al. · Sensors and Actuators A Physical · 2012 · 138 citations

Natural Sciences, Materials Engineering, Materials Science +12

Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method

Takehiro Yoshida, Yuichi Oshima, Takeshi Eri et al. · Journal of Crystal Growth · 2007 · 125 citations

Engineering, Materials Engineering, Materials Science +15

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

Yoshitomo Hatakeyama, Kazuki Nomoto, Naoki Kaneda et al. · IEEE Electron Device Letters · 2011 · 125 citations

Engineering, Electrical Engineering, Materials Science +17