Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method - Concepedia

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Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method

125

Citations

9

References

2007

Year

Takehiro Yoshida, Yuichi Oshima, Takeshi Eri, Ken‐ichi Ikeda, S. Yamamoto, Kazutoshi Watanabe, Masatomo Shibata, Tomoyoshi Mishima

Journal of Crystal Growth

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringSurface ScienceApplied PhysicsAluminum Gallium NitrideGan Power DeviceGallium Oxide3-In Gan SubstratesCategoryiii-v SemiconductorOptoelectronicsVoid-assisted Separation Method

References

	Year	Citations

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