Takehiro Yoshida

Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

Hiroshi Ohta, Naoki Kaneda, Fumimasa Horikiri et al. · IEEE Electron Device Letters · 2015 · 215 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method

Takehiro Yoshida, Yuichi Oshima, Takeshi Eri et al. · Journal of Crystal Growth · 2007 · 125 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +10

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Hajime Fujikura, Taichiro Konno, Takehiro Yoshida et al. · Japanese Journal of Applied Physics · 2017 · 85 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +17

Deposition control for reduction of 193nm photoresist degradation in dielectric etching

Naoki Negishi, Hiroki Takesue, Masahiro Sumiya et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2005 · 70 citations

Dielectric Etching, Arf Resist, Engineering +21

Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

Yuichi Oshima, Takehiro Yoshida, Kazutoshi Watanabe et al. · Journal of Crystal Growth · 2010 · 66 citations

Materials Engineering, Wide-bandgap Semiconductor, Materials Science +4