Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

Hiroshi Ohta, Naoki Kaneda, Fumimasa Horikiri, +4

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRecord Breakdown VoltagesGan Power Devices +7

Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method

Takehiro Yoshida, Yuichi Oshima, Takeshi Eri, +5

Journal of Crystal Growth

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringSurface Science +8

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Hajime Fujikura, Taichiro Konno, Takehiro Yoshida, +1

Japanese Journal of Applied Physics

Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesUndoped Gan LayerSemiconductors +15

Deposition control for reduction of 193nm photoresist degradation in dielectric etching

Naoki Negishi, Hiroki Takesue, Masahiro Sumiya, +3

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Dielectric EtchingArf ResistEngineeringElectron-beam LithographyFluorocarbon Polymer +19

Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

Yuichi Oshima, Takehiro Yoshida, Kazutoshi Watanabe, +1

Journal of Crystal Growth

Materials EngineeringWide-bandgap SemiconductorMaterials ScienceEngineeringApplied Physics +2

Ultrahigh‐speed growth of GaN by hydride vapor phase epitaxy

Takehiro Yoshida, Yuichi Oshima, Kazutoshi Watanabe, +2

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

Materials EngineeringMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorEngineering +10

4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability

Hiroshi Ohta, Naomi Asai, Fumimasa Horikiri, +3

Japanese Journal of Applied Physics

Electrical EngineeringEngineeringHigh Voltage EngineeringHigh Avalanche CapabilityApplied Physics +7

Two-Step Mesa Structure GaN p-n Diodes With Low ON-Resistance, High Breakdown Voltage, and Excellent Avalanche Capabilities

Hiroshi Ohta, Naomi Asai, Fumimasa Horikiri, +3

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringHigh Avalanche CapabilitiesApplied Physics +10

Homoepitaxial Hydride Vapor Phase Epitaxy Growth on GaN Wafers Manufactured by the Na-Flux Method

Masayuki Imanishi, Takehiro Yoshida, Toshio Kitamura, +7

Crystal Growth & Design

Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringCrystalline Defects +13

Macrodefect-free, large, and thick GaN bulk crystals for high-quality 2–6 in. GaN substrates by hydride vapor phase epitaxy with hardness control

Hajime Fujikura, Taichiro Konno, Takayuki Suzuki, +3

Japanese Journal of Applied Physics

Materials EngineeringMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorEngineering +11