Taichiro Konno

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Hajime Fujikura, Taichiro Konno, Takehiro Yoshida et al. · Japanese Journal of Applied Physics · 2017 · 85 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +17

Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent doping variation by quartz-free hydride vapor phase epitaxy

Hajime Fujikura, Taichiro Konno, Takeshi Kimura et al. · Applied Physics Letters · 2020 · 57 citations

Materials Science, Semiconductors, Electrical Engineering +14

Macrodefect-free, large, and thick GaN bulk crystals for high-quality 2–6 in. GaN substrates by hydride vapor phase epitaxy with hardness control

Hajime Fujikura, Taichiro Konno, Takayuki Suzuki et al. · Japanese Journal of Applied Physics · 2018 · 46 citations

Materials Engineering, Materials Science, Electrical Engineering +13

Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy

Kazutaka Kanegae, Hajime Fujikura, Yohei Otoki et al. · Applied Physics Letters · 2019 · 45 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +10

Elimination of macrostep-induced current flow nonuniformity in vertical GaN PN diode using carbon-free drift layer grown by hydride vapor phase epitaxy

Hajime Fujikura, Kentaro Hayashi, Fumimasa Horikiri et al. · Applied Physics Express · 2018 · 30 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +10