Yohei Otoki

Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy

Kazutaka Kanegae, Hajime Fujikura, Yohei Otoki et al. · Applied Physics Letters · 2019 · 45 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +10

Recent progress of high-quality GaN substrates by HVPE method

Hajime Fujikura, Takehiro Yoshida, Masatomo Shibata et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2017 · 43 citations

Materials Science, Materials Engineering, Electrical Engineering +11

Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing

Kazufumi Hirukawa, Kensuke Sumida, Hideki Sakurai et al. · Applied Physics Express · 2021 · 29 citations

Materials Engineering, Materials Science, Electrical Engineering +12

Effects of thermal history during LEC growth on behavior of excess arsenic in semi-insulating GaAs

Tomoki Inada, Yohei Otoki, Katsumi Ohata et al. · Journal of Crystal Growth · 1989 · 26 citations

Semi-insulating Gaas, Electrical Engineering, Engineering +8

Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs

Máire Power, James W. Pomeroy, Yohei Otoki et al. · physica status solidi (a) · 2015 · 16 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Vertical Temperature Gradient +14