Hajime Fujikura

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Hajime Fujikura, Taichiro Konno, Takehiro Yoshida et al. · Japanese Journal of Applied Physics · 2017 · 88 citations

Engineering, Materials Engineering, Materials Science +17

Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent doping variation by quartz-free hydride vapor phase epitaxy

Hajime Fujikura, Taichiro Konno, Takeshi Kimura et al. · Applied Physics Letters · 2020 · 60 citations

Engineering, Materials Engineering, Materials Science +17

Formation of 〈001〉-aligned nano-scale pores on (001) n-InP surfaces by photoelectrochemical anodization in HCl

Akihito Hamamatsu, C. Kaneshiro, Hajime Fujikura et al. · Journal of Electroanalytical Chemistry · 1999 · 56 citations

Natural Sciences, Materials Engineering, Materials Science +16

Electrochemical Formation of Uniform and Straight Nano-Pore Arrays on (001) InP Surfaces and Their Photoluminescence Characterizations

Hajime Fujikura, Aimin Liu, Akihito Hamamatsu et al. · Japanese Journal of Applied Physics · 2000 · 51 citations

Natural Sciences, Materials Engineering, Materials Science +17

Macrodefect-free, large, and thick GaN bulk crystals for high-quality 2–6 in. GaN substrates by hydride vapor phase epitaxy with hardness control

Hajime Fujikura, Taichiro Konno, Takayuki Suzuki et al. · Japanese Journal of Applied Physics · 2018 · 51 citations

Engineering, Materials Engineering, Materials Science +17