Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

Hiroshi Ohta, Naoki Kaneda, Fumimasa Horikiri, +4

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRecord Breakdown VoltagesGan Power Devices +7

5.0 kV breakdown-voltage vertical GaN p–n junction diodes

Hiroshi Ohta, Kentaro Hayashi, Fumimasa Horikiri, +3

Japanese Journal of Applied Physics

Electrical EngineeringEngineeringHigh Voltage EngineeringApplied PhysicsElectric Field Intensity +7

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Hajime Fujikura, Taichiro Konno, Takehiro Yoshida, +1

Japanese Journal of Applied Physics

Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesUndoped Gan LayerSemiconductors +15

Improvement of Piezoelectric Properties of (K,Na)NbO₃ Films Deposited by Sputtering

Kenji Shibata, Kazufumi Suenaga, Kazutoshi Watanabe, +3

Japanese Journal of Applied Physics

Materials ScienceMaterials EngineeringKnn FilmsEngineeringFerroelectric Application +10

4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability

Hiroshi Ohta, Naomi Asai, Fumimasa Horikiri, +3

Japanese Journal of Applied Physics

Electrical EngineeringEngineeringHigh Voltage EngineeringHigh Avalanche CapabilityApplied Physics +7

Two-Step Mesa Structure GaN p-n Diodes With Low ON-Resistance, High Breakdown Voltage, and Excellent Avalanche Capabilities

Hiroshi Ohta, Naomi Asai, Fumimasa Horikiri, +3

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringHigh Avalanche CapabilitiesApplied Physics +10

Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent doping variation by quartz-free hydride vapor phase epitaxy

Hajime Fujikura, Taichiro Konno, Takeshi Kimura, +2

Applied Physics Letters

Materials ScienceSemiconductorsElectrical EngineeringWide-bandgap SemiconductorEngineering +12

Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride

Fumimasa Horikiri, Hiroshi Ohta, Naomi Asai, +3

Applied Physics Express

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringDeep Trench Structures +12

Excellent wet etching technique using pulsed anodic oxidation for homoepitaxially grown GaN layer

Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida

Japanese Journal of Applied Physics

Materials EngineeringDamageless Trench FabricationElectrical EngineeringWide-bandgap SemiconductorEngineering +13

Bulk micromachined energy harvesters employing (K, Na)NbO₃thin film

Lê Văn Minh, Motoaki Hara, Fumimasa Horikiri, +3

Journal of Micromechanics and Microengineering

Materials ScienceMicromachined Energy HarvesterElectrical EngineeringEnergy HarvestingEngineering +10