Fumimasa Horikiri

Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

Hiroshi Ohta, Naoki Kaneda, Fumimasa Horikiri et al. · IEEE Electron Device Letters · 2015 · 215 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

5.0 kV breakdown-voltage vertical GaN p–n junction diodes

Hiroshi Ohta, Kentaro Hayashi, Fumimasa Horikiri et al. · Japanese Journal of Applied Physics · 2018 · 115 citations

Electrical Engineering, Engineering, High Voltage Engineering +9

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Hajime Fujikura, Taichiro Konno, Takehiro Yoshida et al. · Japanese Journal of Applied Physics · 2017 · 85 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +17

Improvement of Piezoelectric Properties of (K,Na)NbO₃ Films Deposited by Sputtering

Kenji Shibata, Kazufumi Suenaga, Kazutoshi Watanabe et al. · Japanese Journal of Applied Physics · 2011 · 59 citations

Materials Science, Materials Engineering, Knn Films +12

4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability

Hiroshi Ohta, Naomi Asai, Fumimasa Horikiri et al. · Japanese Journal of Applied Physics · 2019 · 58 citations

Electrical Engineering, Engineering, High Voltage Engineering +9