Concepedia

Hideo Katayose

HK

Statistics

Publications

3

Citations

120

H-Index

3

Active since

2011

Affiliations

Hitachi (Japan)(Current)

Hosei University

Hideo Katayose is an author at Hitachi (Japan) specializing in semiconductor materials, wide-bandgap semiconductor devices, and semiconductor devices.

Publications per year

2011–2012

3

Publications

3

Over 1.0 kV GaN <i>p</i>–<i>n</i> junction diodes on free‐standing GaN substrates

Kazuki Nomoto, Yoshitomo Hatakeyama, Hideo Katayose et al. · physica status solidi (a) · 2011 · 90 citations

, , +17

Influence of Surface Recombination on Forward Current–Voltage Characteristics of Mesa GaN $\hbox{p}^{+}\hbox{n}$ Diodes Formed on GaN Free-Standing Substrates

Kazuhiro Mochizuki, Kazuki Nomoto, Yoshitomo Hatakeyama et al. · IEEE Transactions on Electron Devices · 2012 · 15 citations

, , +17

Photon-recycling GaN p-n diodes demonstrating temperature-independent, extremely low on-resistance

Kazuhiro Mochizuki, Kazuki Nomoto, Yoshitomo Hatakeyama et al. · 2011 · 15 citations

, , +17

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