Akihisa Terano

High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p–n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

Yoshitomo Hatakeyama, Kazuki Nomoto, Akihisa Terano et al. · Japanese Journal of Applied Physics · 2013 · 115 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Optical-Thermo-Transition Model of Reduction in On-Resistance of Small GaN p–n Diodes

Kazuhiro Mochizuki, Tomoyoshi Mishima, Kazuki Nomoto et al. · Japanese Journal of Applied Physics · 2013 · 37 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +17

Mapping etching induced damages on GaN surfaces using scanning internal photoemission microscopy

Akihisa Terano, Hiroyoshi Imadate, Kenji Shiojima · Materials Science in Semiconductor Processing · 2016 · 37 citations

Electrical Engineering, Induced Damages, Engineering +11

Numerical Analysis of Forward-Current/Voltage Characteristics of Vertical GaN Schottky-Barrier Diodes and p-n Diodes on Free-Standing GaN Substrates

Kazuhiro Mochizuki, Tomoyoshi Mishima, Akihisa Terano et al. · IEEE Transactions on Electron Devices · 2011 · 33 citations

Numerical Analysis, Semiconductor Technology, Electrical Engineering +11

Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p–n Junction Epitaxial Layers

Kazuhiro Mochizuki, Tomoyoshi Mishima, Yuya Ishida et al. · Japanese Journal of Applied Physics · 2013 · 17 citations

Semiconductor Technology, Photonics, Electrical Engineering +13