Jim Richmond

Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

John W. Palmour, Lin Cheng, Vipindas Pala et al. · 2014 · 282 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +13

10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems

Vipindas Pala, Edward Van Brunt, Lin Cheng et al. · 2014 · 151 citations

Semiconductor Technology, Electrical Engineering, Transmission Systems +15

27 kV, 20 A 4H-SiC n-IGBTs

Edward Van Brunt, Lin Cheng, Michael O’Loughlin et al. · Materials science forum · 2015 · 142 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +15

Recent progress in SiC DMOSFETs and JBS diodes at Cree

Robert Callanan, Anant Agarwal, Albert A. Burk et al. · 2008 · 94 citations

Engineering, Power Devices, Kv Sic Dmosfets +16

Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

Brett Hull, Joseph J. Sumakeris, Michael O’Loughlin et al. · IEEE Transactions on Electron Devices · 2008 · 89 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +11