Karl D. Hobart

Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

Joshua D. Caldwell, Travis J. Anderson, James C. Culbertson et al. · ACS Nano · 2010 · 209 citations · Full text

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Yuhao Zhang, Zhihong Liu, Marko J. Tadjer et al. · IEEE Electron Device Letters · 2017 · 175 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +11

Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces

Zhe Cheng, Luke Yates, Jingjing Shi et al. · APL Materials · 2019 · 147 citations · Full text

Materials Science, Thermal Conductance, Electrical Engineering +14

Editors' Choice Communication—A (001) β-Ga₂O₃MOSFET with +2.9 V Threshold Voltage and HfO₂Gate Dielectric

Marko J. Tadjer, Nadeemullah A. Mahadik, Virginia D. Wheeler et al. · ECS Journal of Solid State Science and Technology · 2016 · 135 citations · Full text

Oxide Heterostructures, Materials Science, Electrical Engineering +15

Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates

Marko J. Tadjer, Michael A. Mastro, Nadeemullah A. Mahadik et al. · Journal of Electronic Materials · 2016 · 127 citations

Materials Engineering, Materials Science, Optical Materials +10