S. M. Hu - Concepedia

Author

S. M. Hu

IBM (United States)ORCID

Also Known As

S. M. HU, S. M. Hu, S.M. Hu, Shih-Ming Hu, Siduo Hu, Songyuan Hu

Publications

4.6K

Citations

H-Index

Concepts

All Affiliations

IBM (United States)Stanford University

About

S. M. Hu is an author at IBM (United States) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	38	55	4.4K
2	Applied Physics	36	51	4.2K
3	Natural Sciences	5	5	366
4	Chemical Engineering	3	3	122
5	Chemistry	3	3	221

S. M. Hu

Publications

4.4K

Citations

H-Index

Page 1

	Year	Citations
Stress-related problems in silicon technology S. M. Hu Journal of Applied Physics EngineeringIntegrated CircuitsSilicon On InsulatorSilicon TechnologyStress	1991	497
Formation of stacking faults and enhanced diffusion in the oxidation of silicon S. M. Hu Journal of Applied Physics EngineeringStacking-fault EmbryosStacking-fault GrowthSilicon On InsulatorDefect Tolerance	1974	434
Film-edge-induced stress in substrates S. M. Hu Journal of Applied Physics EngineeringMechanical EngineeringMechanicsContact MechanicStressstrain Analysis	1979	225
Infrared absorption spectra of SiO2 precipitates of various shapes in silicon: calculated and experimental S. M. Hu Journal of Applied Physics Optical MaterialsEngineeringAbsorption SpectroscopyOxygen PrecipitationOptical Characterization	1980	165
Defects in silicon substrates S. M. Hu Journal of Vacuum Science and Technology Materials EngineeringMaterials ScienceSwirl AggregatesDislocation ClustersPhysics	1977	158
Anomalous temperature effect of oxidation stacking faults in silicon S. M. Hu Applied Physics Letters Materials ScienceOxidation TimeEngineeringCrystalline DefectsPhysics	1975	137
Interactions in Sequential Diffusion Processes in Semiconductors S. M. Hu, S. Schmidt Journal of Applied Physics EngineeringSemiconductor DeviceSemiconductorsImpurity ProfilesElectronic Devices	1968	133
On models of phosphorus diffusion in silicon S. M. Hu, P. Fahey, R.W. Dutton Journal of Applied Physics EngineeringConsistent ModelPhysicsDiffusion ResistanceIntrinsic Impurity	1983	132
Dislocation pinning effect of oxygen atoms in silicon S. M. Hu Applied Physics Letters Materials ScienceOxygen ConcentrationEngineeringDislocation InteractionPhysics	1977	130
On the diamond-cubic to hexagonal phase transformation in silicon T. Y. Tan, H. Föll, S. M. Hu Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties SemiconductorsMaterials ScienceIon ImplantationWafer Scale ProcessingEngineering	1981	107

Page 1