Defects in silicon substrates

Abstract

This paper reviews some defects of major importance in silicon substrates: their nature and geometrical distribution; the mechanism of formation; their interplays; and their implications. Topics discussed include swirl aggregates of point-defect clusters and dislocation clusters; dislocations generated by thermal stresses; stacking faults generated by thermal oxidation both on the surface and in the bulk of substrates; and clustering and precipitation of oxygen.