M. Schröter

A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design

Sorin P. Voinigescu, M.C. Maliepaard, J.L. Showell et al. · IEEE Journal of Solid-State Circuits · 1997 · 336 citations

Device Modeling, Electrical Engineering, Engineering +13

VBIC95, the vertical bipolar inter-company model

Colin C. McAndrew, J.A. Seitchik, Derek F. Bowers et al. · IEEE Journal of Solid-State Circuits · 1996 · 238 citations

Device Modeling, Industrial Design, Electrical Engineering +14

SiGe HBT Technology: Future Trends and TCAD-Based Roadmap

M. Schröter, Tommy Rosenbaum, P. Chevalier et al. · Proceedings of the IEEE · 2016 · 175 citations

Device Modeling, Electrical Engineering, Engineering +14

Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz

S.H. Jen, C.C. Enz, D.R. Pehlke et al. · IEEE Transactions on Electron Devices · 1999 · 155 citations

Engineering, High-frequency Operation, Electromagnetic Compatibility +17

Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

P. Chevalier, Christoph Jungemann, Rickard Lovblom et al. · Proceedings of the IEEE · 2017 · 101 citations

Thz Photonics, Electrical Engineering, Millimeter Wave Technology +13