M. Schröter - Concepedia

Author

M. Schröter

Also Known As

C T PORTER, M Schroter, M Schröter, M. SCHROTER, M. SCHRÖTER, M. Schroter, M. Schröter, Michael SchrOter, Michael Schroter, Michael SchrÖter

347

Publications

5.7K

Citations

H-Index

121

Concepts

All Affiliations

Technische Universität Dresden University of California San Diego Ruhr University Bochum Rockwell Automation (United States)Center for Physical Sciences and Technology

About

M. Schröter is an author at Technische Universität Dresden specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	32	92	3.3K
2	Applied Physics	22	51	1.5K
3	Natural Sciences	3	3	146
4	Business	1	1	238
5	Education	1	1	12

M. Schröter

102

Publications

3.5K

Citations

H-Index

Page 1

	Year	Citations
A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design Sorin P. Voinigescu, M.C. Maliepaard, J.L. Showell, IEEE Journal of Solid-State Circuits Device ModelingElectrical EngineeringEngineeringTransistor Noise ParametersRf Semiconductor	1997	336
VBIC95, the vertical bipolar inter-company model Colin C. McAndrew, J.A. Seitchik, Derek F. Bowers, IEEE Journal of Solid-State Circuits Device ModelingIndustrial DesignElectrical EngineeringEngineeringIndustrial Engineering	1996	238
SiGe HBT Technology: Future Trends and TCAD-Based Roadmap M. Schröter, Tommy Rosenbaum, P. Chevalier, Proceedings of the IEEE Device ModelingElectrical EngineeringEngineeringSige Hbt TechnologyAdvanced Packaging (Semiconductors)	2016	175
Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz S.H. Jen, C.C. Enz, D.R. Pehlke, IEEE Transactions on Electron Devices EngineeringHigh-frequency OperationElectromagnetic CompatibilityCircuit SystemMixed-signal Integrated Circuit	1999	155
Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications P. Chevalier, Christoph Jungemann, Rickard Lovblom, Proceedings of the IEEE Thz PhotonicsElectrical EngineeringMillimeter Wave TechnologyEngineeringRf Semiconductor	2017	101
Carbon Nanotube FET Technology for Radio-Frequency Electronics: State-of-the-Art Overview M. Schröter, Martin Claus, P. Sakalas, IEEE Journal of the Electron Devices Society EngineeringGraphene NanomeshesCarbon-based MaterialRf SemiconductorNanoelectronics	2013	92
Physical and Electrical Performance Limits of High-Speed SiGeC HBTs—Part I: Vertical Scaling M. Schröter, Gerald Wedel, B. Heinemann, IEEE Transactions on Electron Devices	2011	87
Physics-based minority charge and transit time modeling for bipolar transistors M. Schröter, Tzung-Yin Lee IEEE Transactions on Electron Devices EngineeringVlsi DesignPower ElectronicsCharge TransportModeling And Simulation	1999	70
Towards an optimal contact metal for CNTFETs Artem Fediai, Dmitry A. Ryndyk, Gotthard Seifert, Nanoscale Optimal Contact MetalGreen Function FormalismEngineeringMechanical EngineeringCharge Transport	2016	65
On the origin of 1/f noise in polysilicon emitter bipolar transistors M. Jamal Deen, S. L. Rumyantsev, M. Schröter Journal of Applied Physics Electrical EngineeringEngineeringEmitter AreaBias Temperature InstabilityApplied Physics	1999	60

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