D.R. Pehlke

Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz

S.H. Jen, C.C. Enz, D.R. Pehlke et al. · IEEE Transactions on Electron Devices · 1999 · 155 citations

Engineering, Electrical Engineering, Microelectronics +16

Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data

D.R. Pehlke, D. Pavlidis · IEEE Transactions on Microwave Theory and Techniques · 1992 · 126 citations

Engineering, Electrical Engineering, Circuit Theory +16

High-frequency application of MOS compact models and their development for scalable RF model libraries

D.R. Pehlke, M. Schroter, A. Burstein et al. · 2002 · 59 citations

Engineering, Electrical Engineering, Microelectronics +16

Extremely high-Q tunable inductor for Si-based RF integrated circuit applications

D.R. Pehlke, A. Burstein, Ming‐Fong Chang · 2002 · 42 citations

Engineering, Electrical Engineering, Microelectronics +15

Compact modeling of high-frequency distortion in silicon integrated bipolar transistors

M. Schröter, D.R. Pehlke, T.-Y. Lee · IEEE Transactions on Electron Devices · 2000 · 30 citations

Engineering, Electrical Engineering, Circuit Theory +16