A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design

Abstract

Fully scalable, analytical HF noise parameter equations for bipolar transistors are presented and experimentally tested on high-speed Si and SiGe technologies. A technique for extracting the complete set of transistor noise parameters from Y parameter measurements only is developed and verified. Finally, the noise equations are coupled with scalable variants of the HICUM and SPICE-Gummel-Poon models and are employed in the design of tuned low noise amplifiers (LNA's) in the 1.9-, 2.4-,and 5.8-GHz bands.