Publication | Closed Access
Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications
101
Citations
83
References
2017
Year
Thz PhotonicsElectrical EngineeringMillimeter Wave TechnologyEngineeringRf SemiconductorHigh-frequency DeviceThz ApplicationsAntennaApplied PhysicsInp/gaassb HbtsTerahertz NetworkTerahertz TechniqueFeature Specific AssetsMicroelectronicsOptoelectronicsSemiconductor Device
This paper presents Si/SiGe:C and InP/GaAsSb HBTs which feature specific assets to address submillimeter-wave and THz applications. Process and modeling status and challenges are reviewed. The specific topics of thermal and substrate effects, reliability, and HF measurements are also discussed.
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