Olivier Ostinelli

New regime of inverse saturable absorption for self-stabilizing passively mode-locked lasers

Rachel Grange, M. Haiml, R. Paschotta et al. · Applied Physics B · 2004 · 116 citations · Full text

Mode-locked Lasers, Photonics, Optical Pumping +7

Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

P. Chevalier, Christoph Jungemann, Rickard Lovblom et al. · Proceedings of the IEEE · 2017 · 101 citations

Thz Photonics, Electrical Engineering, Millimeter Wave Technology +13

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With <i>f</i> _MAX = 1.2 THz

Akshay M. Arabhavi, Filippo Ciabattini, Sara Hamzeloui et al. · IEEE Transactions on Electron Devices · 2022 · 42 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +9

InP/GaAsSb DHBTs for THz applications and improved extraction of their cutoff frequencies

C. R. Bolognesi, Ralf Flückiger, Maria Alexandrova et al. · 2016 · 38 citations

Wide-bandgap Semiconductor, Thz Photonics, Electrical Engineering +15

600 GHz InP/GaAsSb/InP DHBTs Grown by MOCVD with a Ga(As,Sb) Graded-Base and f&lt;sub&gt;T&lt;/sub&gt; x BV&lt;sub&gt;CEO&lt;/sub&gt; &amp;#x226B; 2.5 THz-V at Room Temperature

H.G. Liu, Olivier Ostinelli, Yuping Zeng et al. · 2007 · 30 citations

Wide-bandgap Semiconductor, Room Temperature, Electrical Engineering +9