Akshay M. Arabhavi

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With <i>f</i> _MAX = 1.2 THz

Akshay M. Arabhavi, Filippo Ciabattini, Sara Hamzeloui et al. · IEEE Transactions on Electron Devices · 2022 · 42 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +9

Quaternary Graded-Base InP/GaInAsSb DHBTs With &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;${f}_{\text{T}}$ &lt;/tex-math&gt; &lt;/inline-formula&gt;/&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;${f}_{\text{MAX}}$ &lt;/tex-math&gt; &lt;/inline-formula&gt; = 547/784 GHz

Wei Quan, Akshay M. Arabhavi, Ralf Flückiger et al. · IEEE Electron Device Letters · 2018 · 19 citations

Type-II GaInAsSb/InP Uniform Absorber High Speed Uni-Traveling Carrier Photodiodes

Akshay M. Arabhavi, Rimjhim Chaudhary, Ralf Flückiger et al. · Journal of Lightwave Technology · 2020 · 19 citations · Full text

Semiconductors, Photonics, Electrical Engineering +15

Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation

C. Mukherjee, C. Raya, Bertrand Ardouin et al. · IEEE Transactions on Electron Devices · 2018 · 16 citations

Thz Photonics, Terahertz Technology, Engineering +20

InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs

Diego Calvo Ruiz, Tamara Saranovac, Daxin Han et al. · IEEE Transactions on Electron Devices · 2019 · 14 citations · Full text

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +15