Concepedia

Author

Daxin Han

ETH ZurichORCID

Also Known As

D. Han, Daxin Han, Donghao Han

23

Publications

1.5K

Citations

9

H-Index

17

Concepts

All Affiliations

ETH ZurichSwiss Federal Laboratories for Materials Science and TechnologyNanyang Technological University
DH

About

Daxin Han is an author at ETH Zurich specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

4

4

159

2

Applied Physics

3

3

70

3

Electrical Engineering

3

3

70

4

Biomedical Engineering

1

1

89

5

Materials Science

1

1

89

Daxin Han

×

9

Publications

1.4K

Citations

9

H-Index

YearCitations

Nanocellulose‐MXene Biomimetic Aerogels with Orientation‐Tunable Electromagnetic Interference Shielding Performance

Zhihui Zeng, Changxian Wang, Gilberto Siqueira,

Advanced Science

2020

451

Ultralight, Flexible, and Biomimetic Nanocellulose/Silver Nanowire Aerogels for Electromagnetic Interference Shielding

Zhihui Zeng, Tingting Wu, Daxin Han,

ACS Nano

2020

355

Flexible and Ultrathin Waterproof Cellular Membranes Based on High‐Conjunction Metal‐Wrapped Polymer Nanofibers for Electromagnetic Interference Shielding

Zhihui Zeng, Fuze Jiang, Yang Yue,

Advanced Materials

2020

322

Ultrafine Cellulose Nanofiber‐Assisted Physical and Chemical Cross‐Linking of MXene Sheets for Electromagnetic Interference Shielding

Na Wu, Zhihui Zeng, Nico Kummer,

Small Methods

2021

112

Nanocellulose assisted preparation of ambient dried, large-scale and mechanically robust carbon nanotube foams for electromagnetic interference shielding

Zhihui Zeng, Changxian Wang, Tingting Wu,

Journal of Materials Chemistry A

2020

89

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With <i>f</i> <sub>MAX</sub> = 1.2 THz

Akshay M. Arabhavi, Filippo Ciabattini, Sara Hamzeloui,

IEEE Transactions on Electron Devices

2022

42

InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs

Diego Calvo Ruiz, Tamara Saranovac, Daxin Han,

IEEE Transactions on Electron Devices

2019

14

Impact Ionization Control in 50 nm Low-Noise High-Speed InP HEMTs with InAs Channel Insets

Diego Calvo Ruiz, Tamara Saranovac, Daxin Han,

2019

14

High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec—Part I: Material and Device Characterization, DC Performance, and Simulation

Daxin Han, Giorgio Bonomo, Diego Calvo Ruiz,

IEEE Transactions on Electron Devices

2022

12

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