Ralf Flückiger

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With <i>f</i> _MAX = 1.2 THz

Akshay M. Arabhavi, Filippo Ciabattini, Sara Hamzeloui et al. · IEEE Transactions on Electron Devices · 2022 · 42 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +9

InP/GaAsSb DHBTs for THz applications and improved extraction of their cutoff frequencies

C. R. Bolognesi, Ralf Flückiger, Maria Alexandrova et al. · 2016 · 38 citations

Wide-bandgap Semiconductor, Thz Photonics, Electrical Engineering +15

Accuracy of Microwave Transistor $f_{\rm T}$ and $f_{\rm MAX}$ Extractions

Valeria Teppati, Stefano Tirelli, Rickard Lövblom et al. · IEEE Transactions on Electron Devices · 2014 · 25 citations

Engineering, Radio Frequency, Measurement +17

A $W$-Band On-Wafer Active Load–Pull System Based on Down-Conversion Techniques

Valeria Teppati, Hansruedi Benedickter, Diego Marti et al. · IEEE Transactions on Microwave Theory and Techniques · 2014 · 24 citations

Electrical Engineering, Millimeter Wave Technology, Engineering +12

Type-II InP/GaAsSb double-heterojunction bipolar transistors with<i>f</i>_MAX&gt; 700 GHz

Ralf Flückiger, Rickard Lövblom, Maria Alexandrova et al. · Applied Physics Express · 2014 · 23 citations

Semiconductors, Electrical Engineering, Band Lineup +9