InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With <i>f</i> _MAX = 1.2 THz

Akshay M. Arabhavi, Filippo Ciabattini, Sara Hamzeloui, +8

IEEE Transactions on Electron Devices

SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringElectronic Engineering +7

InP/GaAsSb DHBTs for THz applications and improved extraction of their cutoff frequencies

C. R. Bolognesi, Ralf Flückiger, Maria Alexandrova, +3

Wide-bandgap SemiconductorThz PhotonicsElectrical EngineeringCorrect FmaxEngineering +13

Accuracy of Microwave Transistor $f_{\rm T}$ and $f_{\rm MAX}$ Extractions

Valeria Teppati, Stefano Tirelli, Rickard Lövblom, +3

IEEE Transactions on Electron Devices

EngineeringRadio FrequencyMeasurementAccuracy And PrecisionResidual Calibration +15

A $W$-Band On-Wafer Active Load–Pull System Based on Down-Conversion Techniques

Valeria Teppati, Hansruedi Benedickter, Diego Marti, +7

IEEE Transactions on Microwave Theory and Techniques

Electrical EngineeringMillimeter Wave TechnologyEngineeringRf SemiconductorHigh-frequency Device +10

Type-II InP/GaAsSb double-heterojunction bipolar transistors with<i>f</i>_MAX&gt; 700 GHz

Ralf Flückiger, Rickard Lövblom, Maria Alexandrova, +2

Applied Physics Express

SemiconductorsElectrical EngineeringBand LineupEngineeringPhysics +7

InP/GaAsSb DHBTs Fabricated in a Low-Temperature Teflon Planarization Process

Ralf Flückiger, Rickard Lövblom, Olivier Ostinelli, +2

IEEE Electron Device Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesCutoff Frequencies +11

InP/GaAsSb DHBTs With 500-GHz Maximum Oscillation Frequency

Rickard Lövblom, Ralf Flückiger, Yuping Zeng, +4

IEEE Electron Device Letters

Electrical EngineeringPresent Transistor PerformanceCutoff FrequenciesEngineeringRf Semiconductor +8

Quaternary Graded-Base InP/GaInAsSb DHBTs With &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;${f}_{\text{T}}$ &lt;/tex-math&gt; &lt;/inline-formula&gt;/&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;${f}_{\text{MAX}}$ &lt;/tex-math&gt; &lt;/inline-formula&gt; = 547/784 GHz

Wei Quan, Akshay M. Arabhavi, Ralf Flückiger, +2

IEEE Electron Device Letters

Type-II GaInAsSb/InP Uniform Absorber High Speed Uni-Traveling Carrier Photodiodes

Akshay M. Arabhavi, Rimjhim Chaudhary, Ralf Flückiger, +7

Journal of Lightwave Technology

SemiconductorsPhotonicsElectrical EngineeringOptical MaterialsEngineering +13

InP-based compact photonic crystal directional coupler with large operation range

Ralf Flückiger, R. Wüest, F. Robin, +1

Optics Express

Photonic DevicePhotonicsBandgap WidthEngineeringPhysics +12