Yuping Zeng - Concepedia

Author

Yuping Zeng

University of Delaware ORCID

Also Known As

Y. P. Zeng, Y. Zeng, Y.P. Zeng, Yiqing Zeng, Yu-Ping ZENG, Yu-Ping Zeng, Yuping Zeng, Zeng, Yuping

114

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

University of Delaware University of California, Berkeley ETH Zurich Lawrence Berkeley National Laboratory University of Virginia

About

Yuping Zeng is an author at University of Delaware specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	29	1.4K
2	Applied Physics	17	26	955
3	Medicine	2	2	396
4	Biomedical Engineering	1	1	381
5	Chemical Engineering	1	1	381

Yuping Zeng

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
Wearable Microsensor Array for Multiplexed Heavy Metal Monitoring of Body Fluids Wei Gao, Hnin Yin Yin Nyein, Ziba Shahpar, ACS Sensors EngineeringMechanical EngineeringWearable TechnologyWearable SensorsBiomedical Engineering	2016	381
High-Gain Inverters Based on WSe<sub>2</sub> Complementary Field-Effect Transistors Mahmut Tosun, Steven S.C. Chuang, Hui Fang, ACS Nano Electrical EngineeringEngineeringNanoelectronicsElectronic EngineeringApplied Physics	2014	318
Monolithic 3D CMOS Using Layered Semiconductors Angada B. Sachid, Mahmut Tosun, Sujay B. Desai, Advanced Materials 3D Ic ArchitectureElectrical EngineeringEngineeringDevice IntegrationAdvanced Packaging (Semiconductors)	2016	147
Electron-Selective TiO2 Contact for Cu(In,Ga)Se2 Solar Cells Wei‐Tse Hsu, Carolin M. Sutter‐Fella, Mark Hettick, Scientific Reports	2015	66
Direct growth of single-crystalline III–V semiconductors on amorphous substrates Kevin Chen, Rehan Kapadia, Audrey Harker, Nature Communications	2016	60
InAlN/GaN HEMT on Si With fmax = 270 GHz Peng Cui, Meng Jia, Hang Chen, IEEE Transactions on Electron Devices SemiconductorsElectron DensityElectrical EngineeringElectronic DevicesEngineering	2021	49
High-performance InAlN/GaN HEMTs on silicon substrate with high <i>f</i> <sub>T</sub> × <i>L</i> <sub>g</sub> Peng Cui, Andrew Mercante, Guangyang Lin, Applied Physics Express Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringEngineeringGan Hemts	2019	42
Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications Peng Cui, Yuping Zeng Scientific Reports	2022	41
Demonstration of high-speed staggered lineup GaAsSb-InP unitraveling carrier photodiodes L. Zheng, Xiong Zhang, Yuping Zeng, IEEE Photonics Technology Letters SemiconductorsPhotonicsElectrical EngineeringElectronic DevicesEngineering	2005	31
600 GHz InP/GaAsSb/InP DHBTs Grown by MOCVD with a Ga(As,Sb) Graded-Base and f<sub>T</sub> x BV<sub>CEO</sub> &#x226B; 2.5 THz-V at Room Temperature H.G. Liu, Olivier Ostinelli, Yuping Zeng, Wide-bandgap SemiconductorRoom TemperatureElectrical EngineeringEngineeringHigh-frequency Device	2007	30

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