Drift-diffusion Simulation

Drift-Diffusion Simulation is a computational modeling method in semiconductor device simulation that describes charge transport by solving coupled equations for carrier drift under electric fields and carrier diffusion due to concentration gradients, distinguished from other transport models by its reliance on continuity equations and the local equilibrium approximation.

521

Publications

24.7K

Citations

1.8K

Authors

630

Institutions

Publications per year

2017–2026

180

Variants

Drift-diffusion Simulations

Authors

1.8K

  1. AA
    Asen Asenov

    University of Glasgow, United Kingdom

    14 publications · 1.3K citations

    13

    h-index

  2. AR
    A. R. Brown

    University of Glasgow, United Kingdom

    10 publications · 1.2K citations

    10

    h-index

  3. YW
    Yuh‐Renn Wu

    National Taiwan University, Taiwan

    9 publications · 479 citations

    9

    h-index

  4. NS
    Natalia Seoane

    Universidade de Santiago de Compostela, Spain

    9 publications · 320 citations

    9

    h-index

  5. LJ
    L. Jan Anton Koster

    University of Groningen, Netherlands

    9 publications · 1.7K citations

    9

    h-index

1–5 of 1.8K

Venues

  1. IEEE Transactions on Electron Devices

    47 publications · 2.9K citations

    25

    h-index

  2. Journal of Applied Physics

    44 publications · 1.6K citations

    24

    h-index

  3. Applied Physics Letters

    20 publications · 1K citations

    16

    h-index

  4. Scientific Reports

    11 publications · 402 citations

    11

    h-index

  5. Journal of Computational Electronics

    9 publications · 257 citations

    9

    h-index

1–5