Natalia Seoane

FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability

Daniel Nagy, Guillermo Indalecio, Antonio J. García‐Loureiro et al. · IEEE Journal of the Electron Devices Society · 2018 · 232 citations · Full text

Device Modeling, Electrical Engineering, Engineering +11

Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes

Daniel Nagy, Gabriel Espiñeira, Guillermo Indalecio et al. · IEEE Access · 2020 · 140 citations · Full text

Nanowire Fet Architectures, Future Technology Nodes, Sub Xmlns +18

Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study

Natalia Seoane, Antonio Beltrán Martínez, Andrew R. Brown et al. · IEEE Transactions on Electron Devices · 2009 · 77 citations

Engineering, Discrete Dopants, Random Discrete Dopants +17

Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors

Antonio Martinez, M. Aldegunde, Natalia Seoane et al. · IEEE Transactions on Electron Devices · 2011 · 75 citations

Engineering, Discrete Dopants, Discrete Random Dopants +19

Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

Antonio J. García‐Loureiro, Natalia Seoane, M. Aldegunde et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 2011 · 70 citations

Device Modeling, Quantum Science, Electrical Engineering +15