Daniel Nagy

FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability

Daniel Nagy, Guillermo Indalecio, Antonio J. García‐Loureiro et al. · IEEE Journal of the Electron Devices Society · 2018 · 232 citations · Full text

Device Modeling, Electrical Engineering, Engineering +11

Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes

Daniel Nagy, Gabriel Espiñeira, Guillermo Indalecio et al. · IEEE Access · 2020 · 140 citations · Full text

Nanowire Fet Architectures, Future Technology Nodes, Sub Xmlns +18

Impact of Gate Edge Roughness Variability on FinFET and Gate-All-Around Nanowire FET

Gabriel Espiñeira, Daniel Nagy, Guillermo Indalecio et al. · IEEE Electron Device Letters · 2019 · 44 citations

Device Modeling, Semiconductors, Electrical Engineering +14

Quantum Corrections Based on the 2-D Schrödinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs

Jari Lindberg, M. Aldegunde, Daniel Nagy et al. · IEEE Transactions on Electron Devices · 2014 · 40 citations

Engineering, Ensemble Monte Carlo, Quantum Engineering +21

Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs

Natalia Seoane, Guillermo Indalecio, M. Aldegunde et al. · IEEE Transactions on Electron Devices · 2016 · 38 citations

Device Modeling, Fin-edge Roughness, Electrical Engineering +13