M. Aldegunde

Study of Discrete Doping-Induced Variability in Junctionless Nanowire MOSFETs Using Dissipative Quantum Transport Simulations

M. Aldegunde, Antonio Beltrán Martínez, John R. Barker · IEEE Electron Device Letters · 2012 · 77 citations

Engineering, Semiconductor Physics, Discrete Doping +18

Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors

Antonio Martinez, M. Aldegunde, Natalia Seoane et al. · IEEE Transactions on Electron Devices · 2011 · 75 citations

Engineering, Discrete Dopants, Discrete Random Dopants +19

Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

Antonio J. García‐Loureiro, Natalia Seoane, M. Aldegunde et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 2011 · 70 citations

Device Modeling, Quantum Science, Electrical Engineering +15

Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET

Natalia Seoane, Guillermo Indalecio, Enrique Comesaña et al. · IEEE Transactions on Electron Devices · 2014 · 54 citations

Engineering, Discrete Random Dopants, Line-edge Roughness +17

3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors

M. Aldegunde, Antonio J. García‐Loureiro, K. Kálna · IEEE Transactions on Electron Devices · 2013 · 44 citations

Soi Finfet, Engineering, Integrated Circuits +23