K. Kálna

FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability

Daniel Nagy, Guillermo Indalecio, Antonio J. García‐Loureiro et al. · IEEE Journal of the Electron Devices Society · 2018 · 242 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes

Daniel Nagy, Gabriel Espiñeira, Guillermo Indalecio et al. · IEEE Access · 2020 · 149 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

Antonio J. García‐Loureiro, Natalia Seoane, M. Aldegunde et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 2011 · 70 citations

Engineering, Computational Engineering, Electrical Engineering +17

Experimental findings and SCAPS-1D simulations for high-efficiency MAPbI3 perovskite solar cells beyond 31%

Selma Rabhi, Karthick Sekar, K. Kálna et al. · Optical and Quantum Electronics · 2024 · 66 citations

Natural Sciences, Materials Engineering, Materials Science +12

Simulations of Statistical Variability in <i>n</i>-Type FinFET, Nanowire, and Nanosheet FETs

Natalia Seoane, Julián G. Fernández, K. Kálna et al. · IEEE Electron Device Letters · 2021 · 63 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +17