K. Kálna

FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability

Daniel Nagy, Guillermo Indalecio, Antonio J. García‐Loureiro et al. · IEEE Journal of the Electron Devices Society · 2018 · 232 citations · Full text

Device Modeling, Electrical Engineering, Engineering +11

Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes

Daniel Nagy, Gabriel Espiñeira, Guillermo Indalecio et al. · IEEE Access · 2020 · 140 citations · Full text

Nanowire Fet Architectures, Future Technology Nodes, Sub Xmlns +18

Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

Antonio J. García‐Loureiro, Natalia Seoane, M. Aldegunde et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 2011 · 70 citations

Device Modeling, Quantum Science, Electrical Engineering +15

Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices

B. Benbakhti, A. Soltani, K. Kálna et al. · IEEE Transactions on Electron Devices · 2009 · 60 citations

Wide-bandgap Semiconductor, Engineering, Thermal Transport Equations +16

Simulations of Statistical Variability in <i>n</i>-Type FinFET, Nanowire, and Nanosheet FETs

Natalia Seoane, Julián G. Fernández, K. Kálna et al. · IEEE Electron Device Letters · 2021 · 59 citations · Full text

Engineering, Semiconductor Device, Semiconductors +17