Concepedia

Complementary Metal-oxide-semiconductor Simulation

Complementary Metal-Oxide-Semiconductor Simulation is a computational modeling approach that enables the analysis and prediction of electrical behavior in Complementary Metal-Oxide-Semiconductor (CMOS) devices by solving semiconductor physics equations under specific material, geometric, and operational constraints.

359

Publications

13.1K

Citations

1.3K

Authors

364

Institutions

Publications per year

2017–2026

60

Variants

Cmos Simulation

Parents

Publications

359

New Generation of Predictive Technology Model for Sub-45 nm Early Design Exploration

Wei Zhao, Yu Cao · IEEE Transactions on Electron Devices · 2006 · 851 citations

, , +16

Power distribution system design methodology and capacitor selection for modern CMOS technology

L.D. Smith, Richard E. Anderson, D. Forehand et al. · IEEE Transactions on Advanced Packaging · 1999 · 490 citations

, , +16

A stable rhombohedral phase in ferroelectric Hf(Zr) <sub>1+</sub> <i> <sub>x</sub> </i> O <sub>2</sub> capacitor with ultralow coercive field

Yuan Wang, Yuan Wang, Lei Tao et al. · Science · 2023 · 206 citations

, , +17

CMOS and Memristor-Based Neural Network Design for Position Detection

Idongesit E. Ebong, Pinaki Mazumder · Proceedings of the IEEE · 2011 · 190 citations

, , +17

A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit

J. S. Kauppila, A. Sternberg, Michael L. Alles et al. · IEEE Transactions on Nuclear Science · 2009 · 160 citations

, , +15

1–5 of 359

Authors

1.3K

  1. AA
    Asen Asenov

    University of Glasgow, United Kingdom

    8 publications · 214 citations

    8

    h-index

  2. AR
    A. R. Brown

    University of Glasgow, United Kingdom

    7 publications · 165 citations

    7

    h-index

  3. MC
    Mansun Chan

    Hong Kong University of Science and Technology, Hong Kong SAR China

    6 publications · 181 citations

    6

    h-index

  4. LW
    L. W. Massengill

    Vanderbilt University, United States

    5 publications · 337 citations

    5

    h-index

  5. RD
    R.W. Dutton

    Stanford University, United States

    5 publications · 153 citations

    5

    h-index

1–5 of 1.3K

Institutions

364

  1. University of California, Berkeley

    Berkeley, United States

    14 h-index

    49 publications

    1.4K citations

  2. STMicroelectronics (France)

    Montrouge, France

    10 h-index

    32 publications

    1K citations

  3. Arizona State University

    Tempe, United States

    10 h-index

    25 publications

    2.5K citations

  4. University of Glasgow

    Glasgow, United Kingdom

    10 h-index

    49 publications

    1.1K citations

  5. Stanford University

    Stanford, United States

    9 h-index

    17 publications

    746 citations

  6. Philips (Netherlands)

    Amsterdam, The Netherlands

    9 h-index

    9 publications

    404 citations

  7. Texas Instruments (United States)

    Dallas, United States

    9 h-index

    24 publications

    1.1K citations

  8. University of Illinois Urbana-Champaign

    Urbana, United States

    8 h-index

    16 publications

    640 citations

1–8 of 364

Venues

  1. IEEE Transactions on Electron Devices

    35 publications · 2.1K citations

    23

    h-index

  2. Solid-State Electronics

    22 publications · 777 citations

    17

    h-index

  3. 17

    h-index

  4. IEEE Transactions on Nuclear Science

    20 publications · 938 citations

    16

    h-index

  5. IEEE Electron Device Letters

    17 publications · 492 citations

    15

    h-index

1–5