J. S. Kauppila

A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit

J. S. Kauppila, A. Sternberg, Michael L. Alles et al. · IEEE Transactions on Nuclear Science · 2009 · 159 citations

Device Modeling, Electrical Engineering, Bsim4 Transistor Model +12

A Comparison of the SEU Response of Planar and FinFET D Flip-Flops at Advanced Technology Nodes

Patrick Nsengiyumva, Dennis R. Ball, J. S. Kauppila et al. · IEEE Transactions on Nuclear Science · 2016 · 82 citations

Engineering, Vlsi Design, Nuclear Physics +25

Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance

M. King, Xiaogang Wu, M. Eller et al. · IEEE Transactions on Nuclear Science · 2016 · 72 citations · Full text

Analysis of Bulk FinFET Structural Effects on Single-Event Cross Sections

Patrick Nsengiyumva, L. W. Massengill, Michael L. Alles et al. · IEEE Transactions on Nuclear Science · 2016 · 58 citations

Engineering, Vlsi Design, Computer Architecture +17

On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator Technology

T. D. Loveless, J. S. Kauppila, S. Jagannathan et al. · IEEE Transactions on Nuclear Science · 2012 · 50 citations

Engineering, Vlsi Design, Measurement +18