Concepedia

Breakdown Simulation

Breakdown Simulation is a computational modeling method used in device simulation to analyze the electrical failure mechanisms of semiconductor devices under extreme conditions by simulating the onset and progression of carrier multiplication and current surges beyond operational limits.

539

Publications

15.8K

Citations

1.8K

Authors

490

Institutions

Publications per year

2017–2026

108

Parents

Publications

539

Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

Shreepad Karmalkar, Umesh K. Mishra · IEEE Transactions on Electron Devices · 2001 · 439 citations

, , +17

Modeling unimolecular reactions in photoelectron photoion coincidence experiments

Bálint Sztáray, András Bödi, Tomas Baer · Journal of Mass Spectrometry · 2010 · 176 citations

, , +17

Application of numerical modelling for prediction of the influence of power density on microwave-assisted breakage

D.N. Whittles, Sam Kingman, D.J. Reddish · International Journal of Mineral Processing · 2002 · 175 citations

, , +8

Consistent model for short-channel nMOSFET after hard gate oxide breakdown

B. Kaczer, R. Degraeve, A. De Keersgieter et al. · IEEE Transactions on Electron Devices · 2002 · 166 citations

, , +16

The failure distribution in percolation models of breakdown

Phillip M. Duxbury, P. L. Leath · Journal of Physics A Mathematical and General · 1987 · 152 citations

, , +14

1–5 of 539

Authors

1.8K

  1. MR
    Marija Radmilović-Radjenović

    University of Belgrade, Serbia

    10 publications · 352 citations

    10

    h-index

  2. BR
    Branislav Radjenović

    University of Belgrade, Serbia

    8 publications · 265 citations

    8

    h-index

  3. BZ
    Bo Zhang

    University of Electronic Science and Technology of China, China

    8 publications · 149 citations

    8

    h-index

  4. YH
    Yue Hao

    Xidian University, China

    7 publications · 173 citations

    7

    h-index

  5. ZL
    Zhaoji Li

    University of Electronic Science and Technology of China, China

    6 publications · 114 citations

    6

    h-index

1–5 of 1.8K

Institutions

490

  1. Xi'an Jiaotong University

    Xi'an, China

    14 h-index

    58 publications

    1.8K citations

  2. Xidian University

    Xi'an, China

    12 h-index

    57 publications

    1.4K citations

  3. Centre National de la Recherche Scientifique

    Paris, France

    12 h-index

    45 publications

    1.1K citations

  4. ABB (Switzerland)

    Zurich, Switzerland

    11 h-index

    31 publications

    974 citations

  5. Infineon Technologies (Germany)

    Munich, Germany

    10 h-index

    23 publications

    358 citations

  6. University of Cambridge

    Cambridge, United Kingdom

    10 h-index

    25 publications

    655 citations

  7. Texas Instruments (United States)

    Dallas, United States

    9 h-index

    19 publications

    1.1K citations

  8. IMEC

    Leuven, Belgium

    9 h-index

    50 publications

    2.1K citations

1–8 of 490

Venues

  1. IEEE Transactions on Electron Devices

    81 publications · 3.5K citations

    32

    h-index

  2. IEEE Electron Device Letters

    17 publications · 632 citations

    15

    h-index

  3. Journal of Applied Physics

    14 publications · 424 citations

    13

    h-index

  4. 13

    h-index

  5. IEEE Transactions on Plasma Science

    14 publications · 322 citations

    12

    h-index

1–5