Concepedia

Author

Collin Hitchcock

Rensselaer Polytechnic Institute

Also Known As

C. Hitchcock, C. W. Hitchcock, C.W Hitchcock, C.W. Hitchcock, Cheryl Hitchcock, Collin Hitchcock, Collin W. Hitchcock

71

Publications

621

Citations

15

H-Index

33

Concepts

All Affiliations

Rensselaer Polytechnic InstituteGeneral Electric (United States)Lockheed Martin (United States)GE Global Research (United States)Glenn Research Center
CH

About

Collin Hitchcock is an author at Rensselaer Polytechnic Institute specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

14

16

407

2

Applied Physics

12

13

352

3

Electrical Engineering

12

14

341

4

Chemistry

1

1

42

5

Materials Engineering

1

1

17

Collin Hitchcock

×

19

Publications

461

Citations

15

H-Index

YearCitations

Ion-Induced Mesoplasma Formation and Thermal Destruction in 4H-SiC Power MOSFET Devices

Joseph A. McPherson, Collin Hitchcock, T. Paul Chow,

IEEE Transactions on Nuclear Science

2021

44

Ternary and quaternary antimonide devices for thermophotovoltaic applications

Collin Hitchcock, R.J. Gutmann, H. Ehsani,

Journal of Crystal Growth

1998

42

Antimonide-based devices for thermophotovoltaic applications

Collin Hitchcock, R.J. Gutmann, J.M. Borrego,

IEEE Transactions on Electron Devices

1999

42

4.5kV SiC Charge-Balanced MOSFETs with Ultra-Low On-Resistance

Reza Ghandi, Alexander Bolotnikov, Stacey Kennerly,

2020

33

Growth and characterization of

H. Ehsani, I. Bhat, Collin Hitchcock,

1997

31

4H-SiC n-Channel Insulated Gate Bipolar Transistors on (0001) and (000-1) Oriented Free-Standing n<sup>−</sup>Substrates

Sauvik Chowdhury, Collin Hitchcock, Zachary Stum,

IEEE Electron Device Letters

2016

30

LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices

Arijit Sengupta, Dennis R. Ball, Andrew L. Sternberg,

IEEE Transactions on Nuclear Science

2024

30

Operating Principles, Design Considerations, and Experimental Characteristics of High-Voltage 4H-SiC Bidirectional IGBTs

Sauvik Chowdhury, Collin Hitchcock, Zachary Stum,

IEEE Transactions on Electron Devices

2016

28

p-Type and n-type doping in GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy

H. Ehsani, I. Bhat, Collin Hitchcock,

Journal of Crystal Growth

1998

24

1200V, 25A bi-directional Si DMOS IGBT fabricated with fusion wafer bonding

Jia Wu, Sauvik Chowdhury, Collin Hitchcock,

2014

23

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