Ternary and quaternary antimonide devices for thermophotovoltaic applications

Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

D. E. Aspnes, A. A. Studna · Physical review. B, Condensed matter · 1983 · 4K citations

Natural Sciences, Materials Engineering, Materials Science +17

Ohmic contacts for GaAs devices

Ryan Cox, H. Strack · Solid-State Electronics · 1967 · 516 citations

Engineering, Electrical Engineering, Materials Science +14

Auger recombination in GaAs and GaSb

Güntér Benz, R. Conradt · Physical review. B, Solid state · 1977 · 124 citations

Natural Sciences, Materials Science, Physics +17

Schottky barriers on compound semiconductors: The role of the anion

J. O. McCaldin, T. C. McGill, Carver Mead · Journal of Vacuum Science and Technology · 1976 · 77 citations

Engineering, Materials Science, Physics +17

Ohmic contacts to p- and n-type GaSb

C. Heinz · International Journal of Electronics · 1983 · 32 citations

Engineering, Materials Engineering, Materials Science +16